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NXP Semiconductors
IP4284CZ10-TBR/TT
ESD protection for ultra high-speed interfaces
5. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V I
V ESD
T amb
T stg
Parameter
input voltage
electrostatic discharge
voltage
ambient temperature
storage temperature
Conditions
IEC 61000-4-2, level 4
contact discharge
air discharge
[1]
Min
? 0.5
-
-
? 40
? 55
Max
+5.5
± 8
± 15
+85
+125
Unit
V
kV
kV
° C
° C
[1]
All pins to ground.
6. Characteristics
Table 5. Characteristics
T amb = 25 ° C unless otherwise specified.
Symbol
V BRzd
Parameter
Zener diode
Conditions
I test = 1 mA
Min
6
Typ
-
Max
9
Unit
V
breakdown voltage
I LRzd
Zener diode reverse
per TMDS channel;
-
-
1
μ A
leakage current
V I = 3.0 V
V F
forward voltage
-
0.7
-
V
C ch(TMDS)
TMDS channel
f = 1 MHz;
[1]
0.4
0.5
0.7
pF
capacitance
V bias = 2.5 V
Δ C ch(TMDS)
TMDS channel
f = 1 MHz;
[1]
-
0.05
-
pF
capacitance difference
V bias = 2.5 V
C ch(mutual)
mutual channel
f = 1 MHz;
[1][2]
-
0.07
-
pF
capacitance
V bias = 2.5 V
R dyn
dynamic resistance
I=1A
[3]
positive transient
negative transient
-
-
1
1
-
-
Ω
Ω
V CL(ch)trt(pos) positive transient channel V ESD = 8 kV
[4]
-
8
-
V
clamping voltage
[1]
[2]
[3]
[4]
This parameter is guaranteed by design.
Between signal pin and pin n.c.
According to IEC 61000-4-5 and IEC 61000-4-9.
Human Body Model (HBM) according to JESD22-A-J114D.
IP4284CZ10-TBR_TT
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 19 May 2011
? NXP B.V. 2011. All rights reserved.
3 of 17
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